Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials

Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have enabled new classes of light-emitting diodes, modulators photodetectors, that could be amenable to wafer-scale manufacturing. For devices, the optical losses PICs critical. In contrast silicon, silicon nitride (Si3N4) has emerged as a low-loss platform wide transparency window from ultraviolet mid-infrared absence two-photon absorption at telecommunication bands. Moreover, it is suitable nonlinear photonics due its high Kerr nonlinearity high-power handing capability. These features Si3N4 intrinsically beneficial nanophotonics optoelectronics applications. Here we report incorporating monolayer molybdenum ditelluride (1L-MoTe2) microresonators. We show that, 1L-MoTe2, microresonator quality factors exceeding 3 million in O-band E-band maintained. further investigate change dispersion resonance shift presence extrapolate loss introduced by 1L-MoTe2 bands, out excitonic region. Our work presents key step low-loss, hybrid layered semiconductors without using heterogeneous wafer bonding.